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Proceedings Paper

Excimer laser crystallization of hydrogenated amorphous silicon
Author(s): Yongbin Dai; Zhongyang Xu; Changan Wang; Shaoquiang Zhang; Chengwu An; Xingjiao Li; Xinheng Wan; Hui Ding
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Paper Abstract

Hydrogenated amorphous silicon films have been crystallized by the irradiations of XeCl excimer laser. The crystallized films have been examined by the use of scanning electron microscopy (SEM), x-ray diffraction (XRD) and conductivity measurements to clarify their morphologies, structure and electrical properties. The results show that a high conductive super thin layer is formed by a single pulse laser irradiation with the energy density of 75mJ/cm2. The conductivity increases quickly at laser energy density threshold which decreases when the hydrogen in a-Si:H films is removed by pre-annealing. During crystallization process, oxygen atoms from the air ambient have been introduced into the films and such an introducing process is hindered by the hydrogen eruption. When the oxygen content is high enough, the carrier-transport mechanism includes thermionic emission and thermionic field emission in the vicinity of room temperature, which is similar to semi-insulating polycrystalline silicon.

Paper Details

Date Published: 30 September 1996
PDF: 7 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253126
Show Author Affiliations
Yongbin Dai, Huazhong Univ. of Science and Technology (China)
Zhongyang Xu, Huazhong Univ. of Science and Technology (China)
Changan Wang, Huazhong Univ. of Science and Technology (China)
Shaoquiang Zhang, Huazhong Univ. of Science and Technology (China)
Chengwu An, Huazhong Univ. of Science and Technology (China)
Xingjiao Li, Huazhong Univ. of Science and Technology (China)
Xinheng Wan, Huazhong Univ. of Science and Technology (China)
Hui Ding, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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