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Proceedings Paper

Production of intense atomic nitrogen beam used for doping and synthesis of nitride film by pulsed laser ablation
Author(s): Ning Xu; Yuancheng Du; Zhifeng Ying; Zhongmin Ren; Fuming Li
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Paper Abstract

Intense atomic nitrogen beams have been produced by a novel arc-heated source for pulsed-laser-ablation deposition. The arc discharge has been carried in pure nitrogen gas and maintained stable in arc pressure of 30-300 Torr. The average beam kinetic energy changes with the arc pressure from 0.8 to 2 eV. Strong atomic emission lines in 383-433 nm spectral region indicated that the arc-heated source generated an appreciable flux of nitrogen atoms. Nitrogen atoms, rather than N2 molecules in the arc, have been considered as the most likely nitrogen-arc species responsible for doping and synthesis of nitride film such as CNx, ZnSe:N, GaN, etc.

Paper Details

Date Published: 30 September 1996
PDF: 6 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253118
Show Author Affiliations
Ning Xu, Fudan Univ. (China)
Yuancheng Du, Fudan Univ. (China)
Zhifeng Ying, Fudan Univ. (China)
Zhongmin Ren, Fudan Univ. (China)
Fuming Li, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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