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Proceedings Paper

UV laser activated digital etching of GaAs
Author(s): Takashi Magyar; Yoshinobu Aoyagi
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Paper Abstract

The self-limited etching characteristics of digital etching employing an UV laser/Cl2GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

Paper Details

Date Published: 30 September 1996
PDF: 8 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253114
Show Author Affiliations
Takashi Magyar, RIKEN--The Institute of Physical and Chemical Research (Japan)
Yoshinobu Aoyagi, RIKEN--The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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