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Proceedings Paper

Structural and optical properties of B-FeSi2 film prepared by laser ablation method and comparison of B-FeSi2 films prepared by three different methods
Author(s): Hirofumi Kakemoto; Yunosuke Makita; Hiroshi Katsumata; Tsutomu Iida; Christian Stauter; Akira Obara; Hajime Shibata; Yu-shin Tsai; Shiro Sakuragi; Naoto Kobayashi; Masataka Hasegawa; Shin-ichiro Uekusa; Takeyo Tsukamoto
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Paper Abstract

Semiconductive iron disilicide (beta) -FeSi2 is an attractive material for optoelectronic and thermoelectric devices that can be integrated on Si substrates. Advantages arise from the direct band-gap, high absorption coefficient and high thermoelectric power figure of merit. We present here the semiconductor properties of (beta) -FeSi2 films on Si(100) substrate prepared by laser ablation (LA) method. We compare these results with those obtained from (beta) - FeSi2 films prepared by ion beam synthesis using high- energy ion implantation and electron beam deposition methods. As for laser ablation, two independent growth processes were adopted using two different target materials, The first one was Fe deposition on Si (100) substrate by LA using Fe target and subsequent high-temperature annealing leading to solid phase epitaxy. The second was LA using (beta) -FeSi2 bulk polycrystal as a target material which was grown by horizontal gradient freeze method. (beta) - FeSi2 films prepared by the two processes were heat- treated as a function of annealing temperature and duration time. Structural characterizations were made by reflection high-energy electron diffraction, x-ray diffraction, Raman scattering and optical absorption spectroscopy measurements at room temperature, which revealed that high-quality semiconducting (beta) -FeSi2 films can be fabricated by two LA processes.

Paper Details

Date Published: 30 September 1996
PDF: 12 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253108
Show Author Affiliations
Hirofumi Kakemoto, Electrotechnical Lab. (Japan) and Science Univ. of Tokyo (Japan)
Yunosuke Makita, Electrotechnical Lab. (Japan)
Hiroshi Katsumata, Electrotechnical Lab. (Japan) and Meiji Univ. (Japan)
Tsutomu Iida, Electrotechnical Lab. (Japan) and Meiji Univ. (Japan)
Christian Stauter, Electrotechnical Lab. (Japan)
Akira Obara, Electrotechnical Lab. (Japan)
Hajime Shibata, Electrotechnical Lab. (Japan)
Yu-shin Tsai, Union Material (Japan)
Shiro Sakuragi, Union Material (Japan)
Naoto Kobayashi, Electrotechnical Lab. (Japan)
Masataka Hasegawa, Electrotechnical Lab. (Japan)
Shin-ichiro Uekusa, Meiji Univ. (Japan)
Takeyo Tsukamoto, Science Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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