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Proceedings Paper

Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient
Author(s): Takehito Yoshida; Yuka Yamada; Shigeru Takeyama; Takaaki Orii; Ikurou Umezu; Yunosuke Makita
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Paper Abstract

We report nanometer-sized silicon (Si) crystallites prepared by pulsed laser ablation in constant pressure inert gas ambient. Size distribution of the Si ultrafine particles depends on the pressure of inert gas ambient. It is verified that the size of the Si ultrafine particles is approximately 3 nm and greater in diameter. The nanoscaled ultrafine particles has a crystallinity similar to that of bulk Si. Furthermore, optical properties of the Si nanocrystallites have been studied in terms of the particle size. Visible photoluminescence (PL) bands in the red and green spectral regions appear at room temperature after an oxidation process. The red PL band is independent of the particle size and is stable without degradation by the irradiation of excitation light. In contrast, the green PL band depends on the particle size. The green PL intensity decreases during the irradiation of excitation light in air, and then recovers in the subsequent vacuum evacuation.

Paper Details

Date Published: 30 September 1996
PDF: 8 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253105
Show Author Affiliations
Takehito Yoshida, Matsushita Research Institute Tokyo, Inc. (Japan)
Yuka Yamada, Matsushita Research Institute Tokyo, Inc. (Japan)
Shigeru Takeyama, Matsushita Research Institute Tokyo, Inc. (Japan)
Takaaki Orii, Univ. of Tsukuba (Japan)
Ikurou Umezu, Science Univ. of Tokyo (Japan)
Yunosuke Makita, Electrotechnical Lab. (Japan)


Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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