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Opportunities for transition metal oxide devices in solid state random number generators
Author(s): Wellington Avelino; Bernardo L. Marques; Leonardo Fonseca; Douglas A. A. Ohlberg; Gilberto Medeiros-Ribeiro
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Paper Abstract

At the limits of physical representation of bits, novel opportunities arise, in particular leveraging the granular nature of charges, photons and atoms. One interesting application is the generation of truly random numbers. The need of a true random sequence of numbers is strategic for a variety of applications, ranging from the game industry to cryptography. Physical sources that rely on natural phenomena spanning radioactive decay, chaotic oscillators, thermal and quantum noise have their own merit, but for the purposes of integration, attributes such as bandwidth and power consumption, need to be accounted for. Here we evaluate transition metal oxide two terminal devices, memristors operating near the quantum of conductance and negative differential resistance metal-insulator transition devices, as potential candidates for a solid state source. In particular, the caveats of each implementation will be covered, such as the necessity of postprocessing and scalability.

Paper Details

Date Published: 9 September 2019
PDF: 6 pages
Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 110850L (9 September 2019); doi: 10.1117/12.2530563
Show Author Affiliations
Wellington Avelino, Univ. Federal de Minas Gerais (Brazil)
Bernardo L. Marques, Univ. Federal de Minas Gerais (Brazil)
Leonardo Fonseca, Univ. Federal de Minas Gerais (Brazil)
Douglas A. A. Ohlberg, Univ. Federal de Minas Gerais (Brazil)
Gilberto Medeiros-Ribeiro, Univ. Federal de Minas Gerais (Brazil)


Published in SPIE Proceedings Vol. 11085:
Low-Dimensional Materials and Devices 2019
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov, Editor(s)

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