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Two-dimensional MoS2-enabled flexible rectenna for wireless energy harvesting in the Wi-Fi band (Conference Presentation)
Author(s): Xu Zhang; Jesús Grajal; Jose Luis Vazquez-Roy; Ujwal Radhakrishna; Xiaoxue Wang; Winston Chern; Lin Zhou; Yuhao Zhang; Han Wang; Madan Dubey; Jing Kong; Mildred Dresselhaus; Tomas Palacios

Paper Abstract

MoS2 has attracted substantial attention due to its atomic thickness and outstanding electronic and mechanical properties. As one of the thinnest semiconductors in the world, MoS2 is promising to build flexible electronics that can be integrated with objects with arbitrary shapes and inspires a vision of distributed ubiquitous electronics. Despite recent advances in two-dimensional materials-based electronics (e.g. 2D materials-based transistors, memory devices and sensors), an efficient and flexible energy harvesting solution is necessary, but still missing, to enable a self-powered system. At the same time, the electromagnetic (EM) radiation in the Wi-Fi band (2.4 GHz and 5.9 GHz) is becoming increasingly ubiquitous and it would be beneficial to be able to wirelessly harvest it to power future distributed electronics. However, the rectennas (i.e. RF energy harvesters) based on flexible semiconductors have not been fast enough to cover the Wi-Fi band due to their limited transport properties. Here we present a unique MoS2 semiconducting-metallic phase heterojunction, which enables a flexible and high-speed Schottky diode with a cutoff frequency of 10 GHz. Due to a novel lateral architecture and self-aligned phase engineering, our MoS2 Schottky diode exhibits significantly reduced parasitic capacitance and series resistance. By integrating the MoS2 rectifier with a flexible Wi-Fi band antenna, we successfully fabricate a fully flexible rectenna that demonstrates direct energy harvesting of EM radiation in the Wi-Fi band with zero external bias (battery-free). Moreover, taking advantage of the nonlinearity of the MoS2 Schottky diode, a frequency mixing in the gigahertz range is also successfully demonstrated on flexible substrates.

Paper Details

Date Published: 10 September 2019
PDF
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108919 (10 September 2019); doi: 10.1117/12.2530059
Show Author Affiliations
Xu Zhang, Carnegie Mellon Univ. (United States)
Jesús Grajal, Univ. Politécnica de Madrid (Spain)
Jose Luis Vazquez-Roy, Univ. Carlos III de Madrid (Spain)
Ujwal Radhakrishna, Massachusetts Institute of Technology (United States)
Xiaoxue Wang, Massachusetts Institute of Technology (United States)
Winston Chern, Massachusetts Institute of Technology (United States)
Lin Zhou, Massachusetts Institute of Technology (United States)
Yuhao Zhang, Virginia Polytechnic Institute and State Univ. (United States)
Han Wang, The Univ. of Southern California (United States)
Madan Dubey, U.S. Army Research Lab. (United States)
Jing Kong, Massachusetts Institute of Technology (United States)
Mildred Dresselhaus, Massachusetts Institute of Technology (United States)
Tomas Palacios, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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