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Proceedings Paper

Investigation of the ion-implanted PbSe crystal
Author(s): Jiancheng Zhang; Wenhai Wu
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Paper Abstract

In order to fabricate the photodiode, P-type of PbSe, was implanted by phosphorus ion(P++)) to form p-n junctions in the materials with incident energy of Eo equals 200 keV and doses of Ds equals 1 multiplied by 1014, 5 multiplied by 1014, 5 multiplied by 1015 ions/cm2, respectively. Rp, (Delta) Rp and the depth of the junction were measured and theoretically calculated by means of modification of LSS theory and Bragg principle. The results show that the experimental data of Rp are in agreement with computer simulation, and the electrical parameters of the p-n junctions in PbSe are also discussed. PbSe photodiode was by ionic implantation with performances, ideal factor of diode m equals 2.31, diffusion length L equals 51.4 micrometer, diffusion coefficient D equals 26.52 cm2/s, non-equilibrium minority carrier lifetime (tau) equals 9.96 multiplied by 10-7s.

Paper Details

Date Published: 3 October 1996
PDF: 5 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252980
Show Author Affiliations
Jiancheng Zhang, Shanghai Univ. (China)
Wenhai Wu, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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