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Proceedings Paper

Growth and optical properties of Bi2Ti2O7 single-crystal thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition
Author(s): Hong Wang; Z. H. Wang; M. Wang; S. X. Shang
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Paper Abstract

In this paper we report the epitaxial growth of Bi2Ti2O7 thin films on Si(100) by atmospheric pressure metalorganic chemical vapor deposition technique (APMOCVD). The source materials used were triphenyl bismuth [Bi(C6H5)3] and titanium isopropoxied. The substrate temperature was as low as 500 degrees Celsius. The as-grown Bi2Ti2O7 thin films were high quality single- crystal film with (111) orientation. The transmittance of Bi2Ti2O7 film is between 80% - 90% in the wavelength range 380 - 800 nm, and the absorption edge is at 310 nm. The dielectric constant ((epsilon) ) and loss tangent (tan(delta) ) were found to be 120 and 0.01, respectively, at room temperature. The resistivity of Bi2Ti2O7 film higher than 1 multiplied by 1012 (Omega) .cm under the applied voltage from minus 5 V to plus 5 V.

Paper Details

Date Published: 3 October 1996
PDF: 4 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252974
Show Author Affiliations
Hong Wang, Shandong Univ. (China)
Z. H. Wang, Fudan Univ. (China)
M. Wang, Shandong Univ. (China)
S. X. Shang, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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