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Proceedings Paper

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators
Author(s): Jiuyao Tang; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita
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Paper Abstract

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Paper Details

Date Published: 3 October 1996
PDF: 7 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252945
Show Author Affiliations
Jiuyao Tang, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)
Shizuo Fujita, Kyoto Univ. (Japan)
Shigeo Fujita, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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