Share Email Print

Proceedings Paper

Effects of stoichiometry in semi-insulating GaAs on optoelectronic devices
Author(s): NuoFu Chen; Hongjia He; Yutian Wang; Lanying Lin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The influences of point defects, dislocations, and precipitates on the lattice parameter of undoped semi- insulating GaAs single crystals were analyzed. It was shown that dislocations in such crystals serve as effective gettering sites for As interstitials due to the deformation energy of dislocations. The lattice parameters of these dislocated regions remain relatively constant due to the counterbalance between lattice compression and dilation around the dislocation. Regions away from dislocations show a linear dependence of lattice parameter with As interstitial concentration. Measurements of the lattice parameter in these latter regions by the nondestructive measurement of stoichiometry technique can be used to determine As interstitial concentrations. The nonuniformity in semi-insulating GaAs results in the variation in the threshold voltages of corresponding devices.

Paper Details

Date Published: 3 October 1996
PDF: 9 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252942
Show Author Affiliations
NuoFu Chen, Institute of Semiconductors (China)
Hongjia He, Institute of Semiconductors (China)
Yutian Wang, Institute of Semiconductors (China)
Lanying Lin, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

© SPIE. Terms of Use
Back to Top