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Proceedings Paper

High contrast ratio asymmetric Fabry-Perot optical modulators based on GaAs/AlGaAs multiple quantum wells
Author(s): Zhibiao Chen; Hongda Chen; Wen Gao; Rong Han Wu
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Paper Abstract

A three-layer model and transmission matrix method are developed to analyze the modulation characteristics of GaAs/GaAlAs multiple quantum well asymmetric Fabry-Perot optical modulators. Two conditions of zero reflectivity for getting high contrast ratio are demonstrated and used to design normally-on and normally-off modulators. Low reflectivity of about 5% and high contrast ratio of about 10 are achieved.

Paper Details

Date Published: 3 October 1996
PDF: 3 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252941
Show Author Affiliations
Zhibiao Chen, Institute of Semiconductors (China)
Hongda Chen, National Integrated Optoelectronics Lab. (China)
Wen Gao, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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