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Proceedings Paper

Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films
Author(s): Deheng Zhang; Ruwei Gao; Honglei Ma
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Paper Abstract

A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide (ZnO) films prepared by ion-beam assisted reactive deposition (IBAD). The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. An over 773 K annealing reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can be interpreted using oxygen photodesorption and chemisorption at the surface.

Paper Details

Date Published: 3 October 1996
PDF: 6 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252934
Show Author Affiliations
Deheng Zhang, Shandong Univ. (China)
Ruwei Gao, Shandong Univ. (China)
Honglei Ma, Shandong Univ. (China)

Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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