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Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers
Author(s): Takayuki Watanabe; Deepika Yadav; Stephane Boubanga Tombet; Akira Satou; Alexander A. Dubinov; Victor Ryzhii; Taiichi Otsuji
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Paper Abstract

Current-injection pumping in graphene makes carrier population inversion enabling lasing and/or amplification of terahertz (THz) radiation. We have recently demonstrated single-mode THz lasing at 100K in graphene-channel transistor laser structures. Introduction of a gated double-graphene-layered (G-DGL) van der Waals heterostructure is a promising route to further increase the operation temperature and radiation intensity via plasmon- and/or photon-assisted quantummechanical tunneling. We have proposed a cascading of the G-DGL unit element working as a new type of THz quantumcascade lasers. Numerical analyses demonstrate further increase of the quantum efficiency of THz lasing by orders of magnitude compared to a transistor or single G-DGL structure.

Paper Details

Date Published: 6 September 2019
PDF: 7 pages
Proc. SPIE 11124, Terahertz Emitters, Receivers, and Applications X, 1112406 (6 September 2019); doi: 10.1117/12.2529016
Show Author Affiliations
Takayuki Watanabe, Tohoku Univ. (Japan)
Deepika Yadav, Tohoku Univ. (Japan)
Stephane Boubanga Tombet, Tohoku Univ. (Japan)
Akira Satou, Tohoku Univ. (Japan)
Alexander A. Dubinov, Institute for Physics of Microstructures (Russian Federation)
Victor Ryzhii, Tohoku Univ. (Japan)
Taiichi Otsuji, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 11124:
Terahertz Emitters, Receivers, and Applications X
Manijeh Razeghi; Alexei N. Baranov; Miriam S. Vitiello, Editor(s)

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