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Giant room temperature Rashba Edelstein effect in graphene/2H-TaS2 van der Waals heterostructures (Conference Presentation)
Author(s): Sungjae Cho

Paper Abstract

With great potential in spintronic applications due to the long spin diffusion length, graphene shows limitations in the manipulation of spins due to the small spin-orbit coupling (SOC). Recently, spin Hall effect (SHE) or Rashba-Edelstein effect (REE) has been predicted in a SOC-enhanced graphene by proximity to transition metal dichalcogenides. Here, we report the first observation of REE and inverse REE (IREE) in graphene proximity-coupled to 2H-TaS2. Gate voltage and magnetic field dependence of the nonlocal measurements exclude SHEs both in TaS2 and in graphene as the origins of our observation. At room temperature, we have demonstrated large gate-tunable inverse Rashba-Edelstein length λ_IREE from zero near the charge neutral point of graphene/TaS2 to > 10nm at increased Fermi levels. Our findings open up new opportunities in spintronics towards the efficient generation, manipulation and detection of spins by graphene at room temperature.

Paper Details

Date Published: 10 September 2019
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Proc. SPIE 11090, Spintronics XII, 110901Z (10 September 2019); doi: 10.1117/12.2528246
Show Author Affiliations
Sungjae Cho, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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