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Microscopic transport model for impurity scattering in two-dimensional novel a-T3 materials
Author(s): D. H. Huang; A. Iurov; H.-Y. Xu; Y.-C. Lai; G. Gumbs
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Paper Abstract

The valley-dependent skew scattering of conduction electrons by impurities in two-dimensional α-T3 materials is studied. The interplay of Lorentz and Berry forces, which act on mobile electrons in position and momentum spaces respectively, is quantified. Interactions of electrons with ionized impurities at two valleys are observed in different scattering directions. Both the zeroand first-order Boltzmann moment equations are used for calculating scattering-angle distributions of resulting skew currents, which are significantly enhanced by introducing microscopic inverse energy- and momentum-relaxation times to two moment equations.

Paper Details

Date Published: 9 September 2019
PDF: 24 pages
Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 1112902 (9 September 2019); doi: 10.1117/12.2527782
Show Author Affiliations
D. H. Huang, Air Force Research Lab. (United States)
A. Iurov, The Univ. of New Mexico (United States)
H.-Y. Xu, Arizona State Univ. (United States)
Y.-C. Lai, Arizona State Univ. (United States)
G. Gumbs, Hunter College (United States)


Published in SPIE Proceedings Vol. 11129:
Infrared Sensors, Devices, and Applications IX
Paul D. LeVan; Priyalal Wijewarnasuriya; Ashok K. Sood, Editor(s)

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