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F-P interference optical fiber pressure temperature composite sensor based on sapphire MEMS chip
Author(s): Ya-lin Wu; Zhi-qiang Shao; Wei Wang; Yong-hai Cao; Tong Zhang; Jia-yu Bi
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Paper Abstract

A Fabry-Pérot (F-P) interference optical fiber pressure temperature composite sensor based on all sapphire substrate is researched and fabricated for high temperature applications. Micro-electro-mechanical systems (MEMS) technology and atomic direct bonding technology are used to fabricate F-P pressure temperature composite sensing cavity and then packaged to form core components of the sensing probe. The high-temperature fiber is used as transmission medium of optical signal. Length of pressure sensing cavity is 104.5μm, length of temperature sensing cavity is 434μm. Sensing characteristics test on chip is carried out, and pressurization tests on sensor from room temperature to 400℃ are performed. The experimental results show that pressure chip of 5MPa can distinguish pressure of 0.17kPa, the relative resolution can reach 33ppm, and temperature cavity length fluctuate ±0.1nm within 678s, which is equal to 0.05℃ temperature error. Performance index of sensor in temperature range of the whole is good. This research provides strong support for extrinsic optical fiber sensor based on sapphire composite F-P cavity using for precise and stable pressure and temperature measurement in high temperature environment.

Paper Details

Date Published: 10 May 2019
PDF: 12 pages
Proc. SPIE 11068, Second Symposium on Novel Technology of X-Ray Imaging, 110681Q (10 May 2019); doi: 10.1117/12.2524596
Show Author Affiliations
Ya-lin Wu, Harbin Institute of Technology (China)
The 49th Research Institute of China Electronics Technology Group Corp. (China)
Zhi-qiang Shao, The 49th Research Institute of China Electronics Technology Group Corp. (China)
Wei Wang, The 49th Research Institute of China Electronics Technology Group Corp. (China)
Yong-hai Cao, The 49th Research Institute of China Electronics Technology Group Corp. (China)
Tong Zhang, The 49th Research Institute of China Electronics Technology Group Corp. (China)
Jia-yu Bi, The 49th Research Institute of China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 11068:
Second Symposium on Novel Technology of X-Ray Imaging
Yangchao Tian; Tiqiao Xiao; Peng Liu, Editor(s)

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