Share Email Print
cover

Proceedings Paper • new

Diode-end-pumped actively Q-switched YVO4 Raman laser at 2291nm
Author(s): Sihou Duan; Xikui Ren; Jian Xie; Yongqin Yu; Chenlin Du
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper demonstrate an intracavity Raman laser at 2291 nm by using YVO4 crystal as Raman crystal to achieve efficient Raman conversion in a compact diode-end-pumped actively Q-switched Tm:YLF (Tm3+-doped lithium yttrium fluoride) laser with an L-shaped cavity. With a pump source of fiber-coupled continuous-wave diode laser operating at 793 nm, the Tm:YLF crystal served as gain material in the Raman laser. We made experimental research on the characteristics of first-Stokes Raman laser output the different pulse repetition rates (PRFs). The maximum average output power, pulse width and the corresponding peak power were 175.2 mW, 21.41 ns and 1.63 kW respectively at a pluse repetition frequency of 5 kHz and an incident pump power of 21W.

Paper Details

Date Published: 29 March 2019
PDF: 6 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 110461S (29 March 2019); doi: 10.1117/12.2524419
Show Author Affiliations
Sihou Duan, Shenzhen Univ. (China)
Shenzhen Technology Univ. (China)
Xikui Ren, Shenzhen Univ. (China)
Shenzhen Technology Univ. (China)
Jian Xie, Shenzhen Univ. (China)
Shenzhen Technology Univ. (China)
Yongqin Yu, Shenzhen Univ. (China)
Shenzhen Technology Univ. (China)
Chenlin Du, Shenzhen Univ. (China)
Shenzhen Technology Univ. (China)


Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

© SPIE. Terms of Use
Back to Top