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The enhancement of the InGaAs solar cells by the thermoelectric generation technology under the continuous laser exposure
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Paper Abstract

The temperature rise of the InGaAs solar cells which under the continuous laser exposure is theoretically calculated, and experimentation,correspondingly designed to bismuth telluride thermoelectric power generation and cooling system,thereby enhancing the overall photovoltaic system integrated photoelectric conversion efficiency.

Paper Details

Date Published: 29 March 2019
PDF: 9 pages
Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 110460C (29 March 2019); doi: 10.1117/12.2524354
Show Author Affiliations
Chengmin Wang, Nanjing Univ. of Science and Technology (China)
HuaiAn Vocational College of Information Technology (China)
Guangji Li, Nanjing Univ. of Science and Technology (China)
Hongchao Zhang, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 11046:
Fifth International Symposium on Laser Interaction with Matter
YiJun Zhao, Editor(s)

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