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Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions
Author(s): Gleb D. Demin; Anatoly F. Popkov
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Paper Abstract

Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.

Paper Details

Date Published: 15 March 2019
PDF: 11 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220B (15 March 2019); doi: 10.1117/12.2522526
Show Author Affiliations
Gleb D. Demin, Moscow Institute of Physics and Technology (Russian Federation)
National Research Univ. of Electronic Technology (Russian Federation)
Anatoly F. Popkov, Moscow Institute of Physics and Technology (Russian Federation)
National Research University of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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