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Deep silicon plasma etching: selection of processes for different applications
Author(s): A. V. Miakonkikh; S. N. Averkin; K. V. Rudenko; V. F. Lukichev
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Paper Abstract

Present paper overviews existent and newly developed DSE technologies offering optimal choice for specific demands. Under consideration there are four types of deep silicon etching processes: cyclic original Bosch process and modified one, continuous cryoetch process, cyclic STiGer process, and new Ox-Etch process. All processes designed with fluorine chemistry of SF6 based plasma that provides fastest etch reaction with Silicon enhanced by ion bombardment from plasma. The differences are in approach used to suppress the isotropic etching of the structure sidewalls to achieve required anisotropy and of etch process.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221X (15 March 2019); doi: 10.1117/12.2522505
Show Author Affiliations
A. V. Miakonkikh, Valiev Institute of Physics and Technology (Russian Federation)
S. N. Averkin, Valiev Institute of Physics and Technology (Russian Federation)
K. V. Rudenko, Valiev Institute of Physics and Technology (Russian Federation)
V. F. Lukichev, Valiev Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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