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TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes
Author(s): I. D. Evsikov; N. A. Djuzhev; G. D. Demin; M. A. Makhiboroda
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Paper Abstract

Full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD. Comparative analysis of operation modes was made on the basis of the obtained structures. It was shown that nanoscale gate-all-around transistor has sufficiently low power consumption while vacuum channel field effect transistor makes it possible to achieve performance that exceeds performance which can be obtained from the transistor with semiconductor channel. The combination of the above technologies can serve as approach to the creation of low-power and high-speed nanoscale vacuum devices using established complementary metal-oxide-semiconductor (CMOS) technology.

Paper Details

Date Published: 15 March 2019
PDF: 8 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220O (15 March 2019); doi: 10.1117/12.2522483
Show Author Affiliations
I. D. Evsikov, National Research Univ. of Electronic Technology (Russian Federation)
N. A. Djuzhev, National Research Univ. of Electronic Technology (Russian Federation)
G. D. Demin, Moscow Institute of Physics and Technology (Russian Federation)
M. A. Makhiboroda, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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