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Scalability analysis of magnetic-nano-junction-based STT-MRAM towards sub-20-nm technology nodes
Author(s): A. V. Popov; G. D. Demin; A. F. Popkov
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Paper Abstract

Here we describe SPICE-compatible compact model of the nano-sized magnetic junction for STT-MRAM at technology nodes beyond 90 nm, where the impact of thermal stability factor and magnetotransport size effects should be taken into account at sub-20 nm dimensions. Within this model it was found that the spatial quantization of the spin-transfer torques which occurs in the magnetic nanobridge based on spin-valve junction (SVJ), when scaling down the nanobridge size below 10 nm, leads to several times higher switching speed, rather than in the case of using magnetic tunnel junctions (MTJ) at the same design rule. Implementation of the current-induced magnetization dynamics into the SPICE model of the nano-sized magnetic junction is based on the equivalent circuit for solving the Landau-Lifshitz-GilbertSlonczewski (LLGS) equation with the effective terms describing the microscopic behavior of spin-transfer torques. This model can be useful for predictive simulation of STT-MRAM performance at advanced technology nodes.

Paper Details

Date Published: 15 March 2019
PDF: 12 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220C (15 March 2019); doi: 10.1117/12.2522478
Show Author Affiliations
A. V. Popov, National Research Univ. of Electronic Technology (Russian Federation)
G. D. Demin, National Research Univ. of Electronic Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. F. Popkov, National Research Univ. of Electronic Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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