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Study of synergy phenomena for atomic layer etching of aluminum and hafnium oxides
Author(s): V. Kuzmenko; A. Miakonkikh; K. Rudenko
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Paper Abstract

The process of atomic layer etching (ALE) studied for aluminum oxide and hafnium oxide. The process based on cyclic looping of stages 1) BCl3 adsorption and 2) Ar plasma activation of reaction between adsorbed molecules and surface. The approaches to perform the process on conventional plasma etching tool is considered. The self-saturation of etching process is shown and synergy is calculated. That allows estimating of process window with respect to DC bias and BCl3 dose. The processes were performed at subzero temperatures of wafer (-20°C) which enhance adsorption of BCl3 on the sample, while the walls of reactor were kept at elevated temperature (+40°C) to reduce adsorption of chlorine-containing gases on walls. Such an approach, first used in this work, made it possible to increase the reproducibility of atomic layer etching processes, despite the fact that the work was performed in a conventional tool.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102226 (15 March 2019); doi: 10.1117/12.2522473
Show Author Affiliations
V. Kuzmenko, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. Miakonkikh, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
K. Rudenko, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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