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Cyclic discrete etching of Silicon oxide in deposition-sputtering cycles: towards to ALE
Author(s): V. Kuzmenko; A. Miakonkikh; K. Rudenko
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Paper Abstract

Basic properties of cyclic discrete etching process for Silicon dioxide were studied in conventional plasma etching tool. Process under consideration is based on consequent deposition of fluorocarbon polymer film from plasma of C4F8, and following activation of etching reaction between surface Silicon and Fluorine contained in the film by ion flux from plasma. Deposition rate of polymer film and its etching rate were measured by means of spectral ellipsometry at different wafer temperatures. Atomic layer etching process was demonstrated with usage of Oxygen and Argon plasma. Saturation of per cycle etching rate was achieved with respect to duration of deposition step.

Paper Details

Date Published: 15 March 2019
PDF: 4 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102225 (15 March 2019); doi: 10.1117/12.2522472
Show Author Affiliations
V. Kuzmenko, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. Miakonkikh, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
K. Rudenko, Valiev Institute of Physics and Technology of the RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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