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Simulation of dry e-beam etching of resist and experimental evidence
Author(s): A. Rogozhin; F. Sidorov; M. Bruk; E. Zhikharev
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Paper Abstract

Formation of modern integrated circuits, micro- and nanostructures requires lithography resolution of less than 10 nm. The resolution of e-beam lithography is high enough but its throughput is extremely low. Mechanism of dry e-beam etching of resist has lots in common with chemical amplification of resist. It could be one of possible approaches to improve throughput of e-beam lithography. Dry e-beam etching of resist can provide sensitivity increase by a factor of hundreds. As a result, throughput of the e-beam lithography could be increased dramatically. Some structures obtained by the hybrid e-beam lithography (and exposure doses) are presented. For the simulation of electron tracks in PMMA/Si system “direct” Monte Carlo method is applied. In this method, all the dominant processes (elastic scattering, excitation, ionization and secondary electron generation for E < 20 keV) are simulated separately. The results of the simulation are presented.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221O (15 March 2019); doi: 10.1117/12.2522458
Show Author Affiliations
A. Rogozhin, Institute of Physics and Technology of RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
F. Sidorov, Institute of Physics and Technology of RAS (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
M. Bruk, Institute of Physics and Technology of RAS (Russian Federation)
L. Ya. Karpov Institute of Physical Chemistry (Russian Federation)
E. Zhikharev, Institute of Physics and Technology of RAS (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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