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Robust random number generator based on field effect transistor
Author(s): F. Ablayev; S. N. Andrianov; D. V. Vahrushev; M. T. Ziatdinov; V. S. Romanov; A. A. Soloviev
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Paper Abstract

Compact random number generator (RNG) is presented and demonstrated on the basis of field effect transistor connected in a such a way that avalanche electron current emerges when an input voltage exceeds the threshold value. The avalanche character of this phenomenon provides true randomness and large noise potential in wide spectral band at extremely small feeding electrical power. Created device is robust and it consists of compact elements with the possibility of digital signal acquisition from standard internal or external analogous to digital transducer. Created RNG has been tested. One hundred sequences each with 300000 bits length were tested using 15 separate tests of National Institute of Standards and Technology (NIST) with application of simple “linear post processing”. The results of testing are the following: all 100 sequences had passed NIST test series.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102229 (15 March 2019); doi: 10.1117/12.2522433
Show Author Affiliations
F. Ablayev, Kazan Federal Univ. (Russian Federation)
S. N. Andrianov, Tatarstan Academy of Sciences (Russian Federation)
D. V. Vahrushev, Kazan Federal Univ. (Russian Federation)
M. T. Ziatdinov, Kazan Federal Univ. (Russian Federation)
V. S. Romanov, Kazan Scientific Ctr. (Russian Federation)
A. A. Soloviev, Kazan Scientific Ctr. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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