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Formation of surface states in MOS devices by space radiation protons
Author(s): Artem N. Volkov; Dmitrii V. Andreev; Vladimir M. Maslovsky
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Paper Abstract

This paper proposes the model, which is able to take into account an influence of space radiation on the process of surface states formation in MOS devices in contrast to existing models. We theoretically validate mechanisms of influence of space radiation protons on formation of surface states in MOS devices, which are different from known.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102208 (15 March 2019); doi: 10.1117/12.2522389
Show Author Affiliations
Artem N. Volkov, Zelenograd Research Institute of Physical Problems (Russian Federation)
Dmitrii V. Andreev, Bauman Moscow State Technical Univ. (Russian Federation)
Vladimir M. Maslovsky, Moscow Institute of Physics and Technology (Russian Federation)

Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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