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Fabrication technology of sol-gel Al2O3 films for organic field-effect transistors
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Paper Abstract

A sol-gel synthesis of alumina-based films and followed single crystal formation by thermal fields in vacuum are investigated that can be applied as gate dielectrics for organic field-effect transistors. The results showed that the values of roughness and thickness of the sol-gel Al2O3 film decreased by almost 2 times with increasing temperature annealing in vacuum. It is established that the dielectric constant of sol-gel films decreasing from 9.1 to 7.3 through vacuum annealing at 1000°C acquiring typical value of crystalline sapphire.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102217 (15 March 2019); doi: 10.1117/12.2522121
Show Author Affiliations
Sergey P. Avdeev, Southern Federal Univ. (Russian Federation)
Evgeny Yu. Gusev, Southern Federal Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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