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Modeling of the submicron MOSFETs characteristics for UTSi technology
Author(s): A. S. Adonin; K. O. Petrosyants; D. A. Popov
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Paper Abstract

New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the factories to produce new competitive products without significant capital expenditures for the modernization of production capacities.

Paper Details

Date Published: 15 March 2019
PDF: 6 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220G (15 March 2019); doi: 10.1117/12.2522082
Show Author Affiliations
A. S. Adonin, OJSC Research-and-production enterprise “Pulsar” (Russian Federation)
K. O. Petrosyants, Moscow Institute of Electronics and Mathematics (Russian Federation)
D. A. Popov, Moscow Institute of Electronics and Mathematics (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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