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Features of silicon deep plasma etching process at 3D-TSV structures producing
Author(s): A. A. Golishnikov; D. A. Kostyukov; M. G. Putrya; V. I. Shevyakov
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Paper Abstract

In this work experimental research results of silicon deep plasma etching features during 3D-TSV structure producing in inductively coupled plasma are presented. Silicon etching operational parameters influence (inductor RF power, working gas consumption) on process technological characteristics (Si etching rate, selectivity and etching profile) is investigated. Wherein passivation stage’s operational parameters were not changed and were constant. It is shown that microroughness in the form of microneedles and column structures can be formed on the bottom of formed structures at low RF power values; full stop of Si etching process can be also possible. It has been revealed that during polymerization stage fluorocarbon film’s deposition rate increase is observed on structure’s inclined surface in comparison with film’s deposition rate on vertical surfaces. At the same time fluorocarbon film’s deposition rate on the bottom of trench is higher than in inclined surface of the structure. Silicon surface after deep plasma etching process is studied. Fluorocarbon film’s adhesion to silicon and silicon oxide ability is researched. It is demonstrated that adhesion on test samples has small values or missing.

Paper Details

Date Published: 15 March 2019
PDF: 8 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221Z (15 March 2019); doi: 10.1117/12.2521969
Show Author Affiliations
A. A. Golishnikov, National Research Univ. of Electronic Technology (Russian Federation)
D. A. Kostyukov, National Research Univ. of Electronic Technology (Russian Federation)
M. G. Putrya, National Research Univ. of Electronic Technology (Russian Federation)
V. I. Shevyakov, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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