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Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation
Author(s): K. A. Tsarik; S. D. Fedotov; V. K. Nevolin; V. N. Statsenko
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Paper Abstract

Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3С- SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ~18 μm for on-axis and ~12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.

Paper Details

Date Published: 15 March 2019
PDF: 7 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102219 (15 March 2019); doi: 10.1117/12.2521959
Show Author Affiliations
K. A. Tsarik, National Research Univ. of Electronic Technology (Russian Federation)
S. D. Fedotov, National Research Univ. of Electronic Technology (Russian Federation)
Epiel JSC (Russian Federation)
V. K. Nevolin, National Research Univ. of Electronic Technology (Russian Federation)
V. N. Statsenko, Epiel JSC (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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