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A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime
Author(s): V. Turin; R. Shkarlat; V. Poyarkov; O. Kshensky; G. Zebrev; B. Iñiguez; M. Shur
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Paper Abstract

We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on “extrinsic” drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the “extrinsic” MOSFET in the saturation regime. Finally, we have proposed a linear approximation for asymptotic dependence of the “extrinsic” MOSFET drain current on “extrinsic” drain bias in saturation regime.

Paper Details

Date Published: 15 March 2019
PDF: 9 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220H (15 March 2019); doi: 10.1117/12.2521880
Show Author Affiliations
V. Turin, Orel State Univ. named after I.S. Turgenev (Russian Federation)
R. Shkarlat, Orel State Univ. named after I.S. Turgenev (Russian Federation)
Bolkhov Plant of Semiconductor Devices (Russian Federation)
V. Poyarkov, Bolkhov Plant of Semiconductor Devices (Russian Federation)
O. Kshensky, Bolkhov Plant of Semiconductor Devices (Russian Federation)
G. Zebrev, National Research Nuclear Univ. MEPhI (Russian Federation)
B. Iñiguez, Univ. Rovira i Virgili (Spain)
M. Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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