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Analysis of SNR in 4-transistor backside-illuminated CMOS image sensor
Author(s): Sheng-kai Wang; Chuan Jin; Kai Qiao; Gang-cheng Jiao; Hong-chang Cheng; Lei Yan
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Paper Abstract

Based on the study of working principle and making process of 4-transistor Backside-illuminated CMOS (4T BSI-CMOS), Signal-to-noise ratio (SNR) model are established and quantitative calculating formula is derived. In addition, factors of influencing SNR are analyzed. Two methods are presented to enhance the SNR, the one is optimizing structure of 4T BSI-CMOS image sensor to strengthen the signal and the other one is correlated double sampling to decrease fixed pattern noise (FPN). These results serve as useful guidelines to enhance the SNR of 4T BSI-CMOS and improve the image quality.

Paper Details

Date Published: 12 March 2019
PDF: 6 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231P (12 March 2019); doi: 10.1117/12.2521805
Show Author Affiliations
Sheng-kai Wang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)
Chuan Jin, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)
Kai Qiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)
Gang-cheng Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)
Hong-chang Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)
Lei Yan, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

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