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Proceedings Paper • new

Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films
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Paper Abstract

Special processing of rapid thermal annealing on the cavity coating films for 1950 nm wavelength antimonide quantum well Laser diodes are studied. The maximum output power of the laser is greatly improved by RTA process on cavity facet films from around 610mW to above 700mW. The power conversion efficiency is further improved by the simple process by 23.2% than that of the laser coated. And the laser devices become more reliable and have extended service life after the process.

Paper Details

Date Published: 24 January 2019
PDF: 5 pages
Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520Q (24 January 2019); doi: 10.1117/12.2521803
Show Author Affiliations
Sheng-Wen Xie, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Cheng-Ao Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ye Yuan, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Shu-Shan Huang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Jin-ming Shang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ying-Qiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11052:
Third International Conference on Photonics and Optical Engineering
Ailing Tian, Editor(s)

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