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Silver-based double metal waveguide for terahertz quantum cascade laser
Author(s): R. Khabibullin; D. Ushakov; A. Afonenko; N. Shchavruk; D. Ponomarev; O. Volkov; V. Pavlovskiy; I. Vasil’evskii; D. Safonov; A. Dubinov
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Paper Abstract

We have designed and fabricated terahertz quantum cascade lasers (THz QCLs) with double metal waveguide (DMW) based on three and four-quantum well GaAs/Al0.15Ga0.85As active module with resonant-phonon depopulation scheme. Three-well and four-well THz QCLs have a lasing frequencies of 3.2 THz and 2.3 THz, respectively. We investigate the dependence of threshold current and lasing output power on temperature for fabricated THz QCL. We propose to use DMW based on silver (Ag) for reducing the losses of the waveguide. The spectra of the loss coefficient of the DMW based on Au and Ag are calculated. It is shown, that the use of Ag-based DMW allows to reduce losses by 2-4 cm–1 in comparison with Au-based DMW. Taking into account the absorption of THz radiation by free carriers and optical phonons, the spectrum of total mode losses has a wide minimum in the region of 3-6 THz, which shifts to the highfrequency region of the spectrum with increasing temperature. The postgrowth processing for THz QCL with Ag-Ag DMW are studied.

Paper Details

Date Published: 15 March 2019
PDF: 8 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102204 (15 March 2019); doi: 10.1117/12.2521774
Show Author Affiliations
R. Khabibullin, Institute of UHF Semiconductor Electronics (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
D. Ushakov, Belarusian State Univ. (Belarus)
A. Afonenko, Belarusian State Univ. (Belarus)
N. Shchavruk, Institute of UHF Semiconductor Electronics (Russian Federation)
D. Ponomarev, Institute of UHF Semiconductor Electronics (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
O. Volkov, Kotelnikov Institute of Radio Engineering and Electronics of RAS (Russian Federation)
V. Pavlovskiy, Kotelnikov Institute of Radio Engineering and Electronics of RAS (Russian Federation)
I. Vasil’evskii, National Research Nuclear Univ. MEPhI (Russian Federation)
D. Safonov, National Research Nuclear Univ. MEPhI (Russian Federation)
A. Dubinov, Institute of Applied Physics of the RAS (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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