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Proceedings Paper

Single-mode distributed Bragg reflector lasers at 2.08 μm
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Paper Abstract

We report on successful fabricating of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting at 2080nm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5- mm-long laser diode, single mode continuous-wave operation with side mode suppression ratio (SMSR) as high as 30dB is obtained. The line-width of the lasing wave is kept as narrow as 70MHz. The devices show a stable single mode operation with current tuning rate of 0.01nm/mA.

Paper Details

Date Published: 24 January 2019
PDF: 5 pages
Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520M (24 January 2019); doi: 10.1117/12.2521766
Show Author Affiliations
Cheng-Ao Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Sheng-Wen Xie, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Jin-Ming Shang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ye Yuan, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Fu-Hui Shao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Shu-Shan Huang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ying-Qiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11052:
Third International Conference on Photonics and Optical Engineering
Ailing Tian, Editor(s)

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