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Compact modeling of electrical characteristics of p-MNOS based RADFETs
Author(s): E. Mrozovskaya; P. Zimin; P. Chubunov; G. Zebrev
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Paper Abstract

We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220I (15 March 2019); doi: 10.1117/12.2521703
Show Author Affiliations
E. Mrozovskaya, National Research Nuclear Univ. MEPhI (Russian Federation)
United Rocket and Space Corp. (Russian Federation)
P. Zimin, National Research Nuclear Univ. MEPhI (Russian Federation)
United Rocket and Space Corp. (Russian Federation)
P. Chubunov, National Research Nuclear Univ. MEPhI (Russian Federation)
United Rocket and Space Corp. (Russian Federation)
G. Zebrev, National Research Nuclear Univ. MEPhI (Russian Federation)
United Rocket and Space Corp. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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