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Effect of Ar ion-plasma treatment on residual stress in thin Cr films
Author(s): A. Babushkin; R. Selyukov; I. Amirov
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Paper Abstract

The results of investigation of the effect of ion-plasma treatment in Ar plasma with ion energies εi = 15-30 eV on residual stress in thin Cr films are presented. Mean stress depending on εi and treatment time t was determined using Xray diffractometry and test microbridges, stress gradient was determined using test microcantilevers. The Cr films initially had compressive stress and a positive value of the stress gradient that is they had greater compressive stress near the interface than near the surface. The treatments at εi = 15-25 eV, t = 15-45 min led to increase in compressive stress. The treatments of Cr films at εi = 25-30 eV, t = 60 min led to decrease of the initial compressive stress. The stress gradient after ion-plasma treatment at εi above 15 eV increased. The higher the ion energy or the longer the treatment time, the greater the value of the stress gradient.

Paper Details

Date Published: 15 March 2019
PDF: 8 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102223 (15 March 2019); doi: 10.1117/12.2521617
Show Author Affiliations
A. Babushkin, Institute of Physics and Technology (Russian Federation)
R. Selyukov, Institute of Physics and Technology (Russian Federation)
I. Amirov, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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