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Synergistic effects of deformation and solid-state reactions in Si with buried glass layer initiated by annealing in non-isothermal reactor
Author(s): Yuri I. Denisenko
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Paper Abstract

This study presents a scientific opinion on differences in formation of self-organizing dislocation structures in (100) - oriented Si specimens subjected to co-implantation by P+ and O2 + ions and 2-step annealing process. At the first step, the specimens were exposed to 5-minutes treatment in a non-isothermal reactor at 900 °С at a two directions of grad T. At the second step, a process of defects evolution continued in conventional isothermal furnace (1150 °С, 4 h). Depending on the direction of grad T at the first step, the defects evolution process led to the formation of two kinds of the self-organized dislocation structures, which are basically dissipative. A synergetic approach used in this experiment have ensured conditions of non-equilibrium, nonlinearity, instability, and irreversibility by creating the stress and temperature gradients, effects from excess point defects flows, and interactions between Si matrix and impurity atoms. Along with plastic deformation, this joint multi-parameter effect on Si crystal led to the creation of a set of unique structural defects.

Paper Details

Date Published: 15 March 2019
PDF: 8 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221T (15 March 2019); doi: 10.1117/12.2521443
Show Author Affiliations
Yuri I. Denisenko, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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