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Design and theory analysis of infrared detector
Author(s): Xiu-qiang Li
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Paper Abstract

In order to achieve the purpose of far detective distance、relatively high anti-jamming performance, the new missile requirements of infrared detector with high detectivity and low signal-to-noise(SNR), fast cooling-down. Based on the mechanism of infrared detector and design theory, combining technology practice, the indium antimonide(InSb) detector chip passivation film and the antireflection coating design and manufacturing are analyzed, while the Principe of multi-layer structure of the fast cooling-down cooler tubes are analyzed. Its detectivity is beyond 3x1010 cm·Hz1/2·W-1, the current responsivity over 0.24A/W, the impedance at zero bias voltage beyond 500KΩ, cooling-down time less than 3 seconds. The specifications meet the requirement for air-defense missile, and out-door the infrared detector has been demonstrated successfully. It can realize the requirement of missile detection distance is greater than 5km.

Paper Details

Date Published: 12 March 2019
PDF: 9 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231C (12 March 2019); doi: 10.1117/12.2521432
Show Author Affiliations
Xiu-qiang Li, Louyang Opto-electro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

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