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Linear avalanche photodetector based on CMOS process
Author(s): Guohao Ju; Zhengxi Cheng; Yongping Chen
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Paper Abstract

A linear avalanche photodetector based on standard CMOS process is designed and fabricated. The doping dose of p-layer of the device with typical n+-p-π-p+ epitaxial structure is 1.82×1012/cm2, and the depth of the doping peak concentration is 2.1 μm. The dark current, photocurrent, spectral response and excess noise factor are measured. The punch-through voltage is about 60 V, the breakdown voltage is about 147 V. The spectral response range is 400~1100 nm, and the peak response wavelength is about 850 nm, the peak response wavelength is in the near-infrared range. When the gain is 50, the reverse bias voltage is about 143.3 V, and excess noise factor is about 4.35. The results show that the device has an excellent performance of visible light detection.

Paper Details

Date Published: 12 March 2019
PDF: 5 pages
Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231A (12 March 2019); doi: 10.1117/12.2521364
Show Author Affiliations
Guohao Ju, Shanghai Institute of Technical Physics (China)
ShanghaiTech Univ. (China)
Univ. of Chinese Academy of Sciences (China)
Zhengxi Cheng, Shanghai Institute of Technical Physics (China)
Yongping Chen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 11023:
Fifth Symposium on Novel Optoelectronic Detection Technology and Application
Qifeng Yu; Wei Huang; You He, Editor(s)

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