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XUV-laser induced delamination of multilayer graphene from silicon carbide substrate (Conference Presentation)
Author(s): Vojtěch Vozda; Tomáš Burian; Jaromír Chalupský; Jan Dostál; Věra Hájková; Libor Juha; Miroslav Krůs; Jan Kunc; Nikita Medvedev
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Paper Abstract

Widely used and most reliable growing technique for fabrication of large-scale graphene grains, a thermal decomposition on silicon carbide (SiC), significantly reduces the carrier mobility partially due to crystal imperfections and partially due to substrate phonons which collide with the charge carriers. Elimination of the substrate influence is therefore essential to keep the carrier mobility at a very high level. In our experiment, samples of multi-layer epitaxial graphene grown on SiC were exposed to intense 21.2-nm radiation provided by Ne-like Zn XUV laser driven by the Prague Asterix Laser System (PALS). A sub-nanosecond pulse of energetic (58.5 eV) photons is used to break relatively weak bonds between the SiC substrate and graphene while keeping the graphene layer almost unaffected. An irradiated area was inspected by micro-Raman spectroscopy, white-light interferometry (WLI), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Data show clear evidence of delamination of the multi-layer graphene which is elevated by 5 nm. Decrease of the mechanical strain and increase of number of defects in the irradiated area observed from Raman spectra is discussed.

Paper Details

Date Published: 14 May 2019
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Proc. SPIE 11035, Optics Damage and Materials Processing by EUV/X-ray Radiation VII, 110350F (14 May 2019); doi: 10.1117/12.2521294
Show Author Affiliations
Vojtěch Vozda, Charles Univ. (Czech Republic)
Institute of Physics of the CAS, v.v.i. (Czech Republic)
Tomáš Burian, Institute of Physics of the CAS, v.v.i. (Czech Republic)
Jaromír Chalupský, Institute of Physics of the CAS, v.v.i. (Czech Republic)
Jan Dostál, Institute of Plasma Physics of the CAS, v.v.i. (Czech Republic)
Věra Hájková, Institute of Physics of the CAS, v.v.i. (Czech Republic)
Libor Juha, Institute of Physics of the CAS, v.v.i. (Czech Republic)
Miroslav Krůs, Institute of Plasma Physics of the CAS, v.v.i. (Czech Republic)
Jan Kunc, Charles Univ. (Czech Republic)
Nikita Medvedev, Institute of Physics of the CAS, v.v.i. (Czech Republic)


Published in SPIE Proceedings Vol. 11035:
Optics Damage and Materials Processing by EUV/X-ray Radiation VII
Libor Juha; Saša Bajt; Stéphane Guizard, Editor(s)

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