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Plasmonic terahertz emitters with high-aspect ratio metal gratings
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Paper Abstract

We propose a novel technology for fabricating plasmonic photoconductive antennas (PCAs) based on superlattice (SL) with increased height of the plasmonic gratings up to 100 nm. We passivate the surface of the SL by Si3N4, etch there windows and deposit Ti/Au antenna metallization. The plasmonic gratings are formed by electron-beam lithography with Ti/Au metallization followed by lift-off. Then an Al2O3 anti-reflection coating layer for reduction of the Fresnel reflection losses is used on the top of the plasmonic gratings, which also serves for maintaining its mechanical stability and providing the excitation of guided modes at the resonant wavelengths of the subwavelength slab waveguide formed by the metal gratings. Current-voltage measurements under femtosecond laser illumination reveal strong increase of the transient photocurrent generated by the fabricated plasmonic PCA which is 15 times higher than for conventional one (i.e. without the plasmonic gratings). The obtained terahertz (THz) power spectra demonstrate 100-times increase of the THz power in the plasmonic PCA. The results might be of interest to the needs of THz spectroscopy and imaging systems, in particular, operating with low-power lasers.

Paper Details

Date Published: 15 March 2019
PDF: 5 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102203 (15 March 2019); doi: 10.1117/12.2521290
Show Author Affiliations
D. V. Lavrukhin, Institute of UHF Semiconductor Electronics (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
A. E. Yachmenev, Institute of UHF Semiconductor Electronics (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
I. A. Glinskiy, Institute of UHF Semiconductor Electronics (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
R. A. Khabibullin, Institute of UHF Semiconductor Electronics (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
M. Ryzhii, Univ. of Aizu (Japan)
T. Otsuji, Tohoku Univ. (Japan)
M. Shur, Rensselaer Polytechnic Institute (United States)
Electronics of the Future, Inc. (United States)
K. I. Zaytsev, A. M. Prokhorov General Physics Institute of the RAS (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
Sechenov First Moscow State Medical Univ. (Russian Federation)
D. S. Ponomarev, Institute of UHF Semiconductor Electronics (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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