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Proceedings Paper

Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals
Author(s): Yu Long Mo; Quanling Yue; Chaowang Liu; Hua Chen; Gang Wu
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Paper Abstract

In order to meet with the epitaxial growth of large area Hg1-xCdxTe (MCT) with various compositions for infrared focal plane arrays, CdTe and Cd1-yZnyTe (y equals 0.020, 0.025 and 0.040 for various x) crystals with 120 mm length and 20 - 40 mm diameter have been successfully synthesized and grown by the vertical Bridgman method. These crystals were grown unseededly or seededly and free of any macroscopic defects e.g. micro-cave and crackles. Wafers with areas from 12 X 18 mm2 to 30 X 35 mm2 in the <111> orientation have been obtained from large grain of the ingot. Effects of changing the ampoule base shape upon the crystal growth have also been investigated. A necked ampoule bottom is preferred to ones employing seeding. Assessments of the samples have included infrared transmission (range 2.4 - 24 micrometers ), etch pit density, X-ray photography and three-crystal rocking curve measurement. Good quality MCT epitaxial films (areas of 12 X 18 mm2 and 20 X 20 mm2), as demonstrated by good surface topography, electrical parameters, have been grown by liquid phase epitaxy and metal organic chemical vapor epitaxy onto CdTe(CT) and Cd1-yZnyTe(CZT) substrate materials produced in our study.

Paper Details

Date Published: 25 September 1996
PDF: 7 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252117
Show Author Affiliations
Yu Long Mo, Kunming Research Institute of Physics (China)
Quanling Yue, Kunming Research Institute of Physics (China)
Chaowang Liu, Kunming Research Institute of Physics (China)
Hua Chen, Kunming Research Institute of Physics (China)
Gang Wu, Kunming Research Institute of Physics (China)


Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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