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Proceedings Paper

Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy
Author(s): Shida Chen; Xianzhong He; Li Lin
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Paper Abstract

The growth of HgCdTe(MCT) epilayers on GaAs(211)B substrate by molecular beam epitaxy (MBE) have been reported. The growth procedure of MCT is described. Various characterization techniques have been employed for evaluating the quality of MCT epilayers. A planar PV array are fabricated for assessment of MCT epilayer quality. The present results represent an important step toward the demonstration of MBE epilayers for fabrication of focal plane arrays.

Paper Details

Date Published: 25 September 1996
PDF: 6 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252113
Show Author Affiliations
Shida Chen, North China Research Institute of Electro-Optics (China)
Xianzhong He, North China Research Institute of Electro-Optics (China)
Li Lin, North China Research Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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