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The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors
Author(s): David Z. Ting; Alexander Soibel; Arezou Khoshakhlagh; Sam A. Keo; Sir B. Rafol; Anita M. Fisher; Cory J. Hill; Edward M. Luong; Brian J. Pepper; Sarath D. Gunapala
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Paper Abstract

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) is an adjustable band gap, broad-band III-V infrared detector material that has emerged in recent years as an alternative to the more established InAs/GaSb type-II superlattice. We have reported results on a mid-wavelength focal plane array (FPA) based on the InAs/InAsSb T2SLS unipolar barrier infrared detector architecture. Significantly, the FPA exhibits very good operating characteristics at 160 K, demonstrating a considerably operating temperature advantage over the MWIR market-leading InSb FPAs, while maintaining III-V semiconductor manufacturing robustness. In this article we summarize the development at the NASA Jet Propulsion Laboratory leading to the mid-wavelength InAs/InAsSb T2SLS infrared detectors, provide a brief look at the history of the development of the InAs/InAsSb T2SLS absorber, and survey the current status of InAs/InAsSb T2SLS detectors.

Paper Details

Date Published: 14 May 2019
PDF: 9 pages
Proc. SPIE 11002, Infrared Technology and Applications XLV, 110020F (14 May 2019); doi: 10.1117/12.2521093
Show Author Affiliations
David Z. Ting, Jet Propulsion Lab. (United States)
Alexander Soibel, Jet Propulsion Lab. (United States)
Arezou Khoshakhlagh, Jet Propulsion Lab. (United States)
Sam A. Keo, Jet Propulsion Lab. (United States)
Sir B. Rafol, Jet Propulsion Lab. (United States)
Anita M. Fisher, Jet Propulsion Lab. (United States)
Cory J. Hill, Jet Propulsion Lab. (United States)
Edward M. Luong, Jet Propulsion Lab. (United States)
Brian J. Pepper, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 11002:
Infrared Technology and Applications XLV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson, Editor(s)

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