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Silicon nanobridge as a high quality mechanical resonator
Author(s): D. E. Presnov; A. A. Dorofeev; I. V. Bozhev; A. S. Trifonov; S. G. Kafanov; Yu. A. Pashkin; V. A. Krupenin
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Paper Abstract

The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity

Paper Details

Date Published: 15 March 2019
PDF: 7 pages
Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019); doi: 10.1117/12.2521034
Show Author Affiliations
D. E. Presnov, M.V. Lomonosov Moscow State Univ. (Russian Federation)
A. A. Dorofeev, M.V. Lomonosov Moscow State Univ. (Russian Federation)
I. V. Bozhev, M.V. Lomonosov Moscow State Univ. (Russian Federation)
A. S. Trifonov, M.V. Lomonosov Moscow State Univ. (Russian Federation)
S. G. Kafanov, Lancaster Univ. (United Kingdom)
Yu. A. Pashkin, Lancaster Univ. (United Kingdom)
Lebedev Physical Institute (Russian Federation)
V. A. Krupenin, M.V. Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11022:
International Conference on Micro- and Nano-Electronics 2018
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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