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Proceedings Paper

Photoelectric properties of a voltage-tunable two-color quantum well infrared photodetector
Author(s): Liqiu Cui; De Sheng Jiang; Yaohui Zhang; Wen-Gang Wu; Chunying Song; Wei Liu; Ruozhen Wang
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Paper Abstract

A new voltage-tunable two-order GaAs/AlGaAs multistacks quantum well infrared photodetector (QWIP) has been investigated in this work. The infrared photodetector consists of GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and GaAs/AlGaAs square quantum wells (SQWs) with photovoltaic and photoconductive dual-mode operation in the 3 approximately 5.3 micrometers and 7.5 approximately 12 atmosphere windows. Experimental and theoretical studies have been conducted on the device physics of the intersubband transitions based on photoexcitation from ground state to different upper subbands including quasibound subband in DBQWs to virtual energy levels within the continuum in SQWs. These allow a better understanding of the optical and transport behaviors of the QWIP. The unique performance and very simple voltage-tunable switching behavior of the two-color GaAs/AlGaAs QWIP are expected to be quite competitive with HgCdTe and InSb infrared photodetectors for large area staring array imaging and two- color or multi-color detecting applications where material uniformity and simple device technology are important.

Paper Details

Date Published: 25 September 1996
PDF: 6 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252101
Show Author Affiliations
Liqiu Cui, Institute of Semiconductors (China)
De Sheng Jiang, Institute of Semiconductors (China)
Yaohui Zhang, Institute of Semiconductors (China)
Wen-Gang Wu, Institute of Semiconductors (China)
Chunying Song, Institute of Semiconductors (China)
Wei Liu, Institute of Semiconductors (China)
Ruozhen Wang, Beijing Normal Univ. (China)

Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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