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Proceedings Paper

Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors
Author(s): Qun Li; Chun-Xia Du; Jun Deng; Rui Kong; Bao-Quan Liu; Guangdi Shen; Jie Yin
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Paper Abstract

The simulation of a new type of GaAs/GaAlAs quantum well infrared photodetectors based on a new physics mechanism has been performed. The essential work is concentrated on the device parameters' influence on the energy levels and absorption peaks, they would have important effects on device design. Moreover, a new characteristics-infrared detector with bias-tuned wavelength is proposed.

Paper Details

Date Published: 25 September 1996
PDF: 5 pages
Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252092
Show Author Affiliations
Qun Li, Beijing Polytechnic Univ. (China)
Chun-Xia Du, Beijing Polytechnic Univ. (China)
Jun Deng, Beijing Polytechnic Univ. (China)
Rui Kong, Beijing Polytechnic Univ. (China)
Bao-Quan Liu, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Jie Yin, North China Research Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 2894:
Detectors, Focal Plane Arrays, and Applications
William G. D. Frederick; Junhong Su; Marc Wigdor, Editor(s)

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